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Free-standing (single crystal) GaN substrate, C plane (0001), size 2\" diameter
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\nConductivity type: N-type (undoped)\n
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  • \nDimension: 2\" diameter
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  • \nThickness: 350 +/- 25 um\n
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  • \nUsable area: >90%
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  • \nOrientation: C-plane (0001) off angle toward M-axis <1-100> 0.35 deg +/- 0.15 deg\n
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  • \nTotal Thickness Variation: <15 um
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  • \nBow: < 20 um
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  • \nResistivity (300K): < 0.5 Ohm.cm
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  • \nCarrier Concentration: 1e17cm-3\n
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  • \nMobility: 500 cm2/(V*s)
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  • \nDislocation Density: < 9 x 105 cm-2\n
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  • \nPolishing: Front surface: Ra < 0.5 nm, epi-ready polished. back surface fine ground.
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  • \nPackage: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.
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Related Reference

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1. Blue InGaN/GaN laser diodes grown on (33) free¨«standing GaN substrates

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https://doi.org/10.1002/pssc.201001012

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2.Review: InGaN-BASED LASER DIODES

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https://www.jsap.or.jp/jsapi/Pdf/Number01/Vol-1_Cutting%20Edge.pdf

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","image":["https://img.puremsesupplies.shop/images/product/mse-pro-laser-diode-grade-2-inch-undoped-n-type-gallium-nitride-single-crystal-c-plane-0001-1.jpg"],"sku":"mse-pro-laser-diode-grade-2-inch-undoped-n-type-gallium-nitride-single-crystal-c-plane-0001","brand":{"@type":"Brand","name":"MSE Supplies LLC"},"offers":{"@type":"AggregateOffer","lowPrice":1342.18,"highPrice":1342.18,"priceCurrency":"USD","availability":"https://schema.org/InStock","url":"https://puremsesupplies.shop/products/mse-pro-laser-diode-grade-2-inch-undoped-n-type-gallium-nitride-single-crystal-c-plane-0001","offerCount":1}}
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MSE PRO Laser Diode Grade 2 inch Undoped N-type Gallium Nitride Single Crystal C plane (0001)

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MSE PRO Laser Diode Grade 2 inch Undoped N-type Gallium Nitride Single Crystal C plane (0001)

Free-standing (single crystal) GaN substrate, C plane (0001), size 2" diameter
Conductivity type: N-type (undoped)
  • Dimension: 2" diameter
  • Thickness: 350 +/- 25 um
  • Usable area: >90%
  • Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.35 deg +/- 0.15 deg
  • Total Thickness Variation: <15 um
  • Bow: < 20 um
  • Resistivity (300K): < 0.5 Ohm.cm
  • Carrier Concentration: 1e17cm-3
  • Mobility: 500 cm2/(V*s)
  • Dislocation Density: < 9 x 105 cm-2
  • Polishing: Front surface: Ra < 0.5 nm, epi-ready polished. back surface fine ground.
  • Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.

Related Reference

1. Blue InGaN/GaN laser diodes grown on (33) free¨«standing GaN substrates

https://doi.org/10.1002/pssc.201001012

2.Review: InGaN-BASED LASER DIODES

https://www.jsap.or.jp/jsapi/Pdf/Number01/Vol-1_Cutting%20Edge.pdf

$1,342.18

Original: $4,473.95

-70%
MSE PRO Laser Diode Grade 2 inch Undoped N-type Gallium Nitride Single Crystal C plane (0001)—

$4,473.95

$1,342.18

Product Information

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Description

Free-standing (single crystal) GaN substrate, C plane (0001), size 2" diameter
Conductivity type: N-type (undoped)
  • Dimension: 2" diameter
  • Thickness: 350 +/- 25 um
  • Usable area: >90%
  • Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.35 deg +/- 0.15 deg
  • Total Thickness Variation: <15 um
  • Bow: < 20 um
  • Resistivity (300K): < 0.5 Ohm.cm
  • Carrier Concentration: 1e17cm-3
  • Mobility: 500 cm2/(V*s)
  • Dislocation Density: < 9 x 105 cm-2
  • Polishing: Front surface: Ra < 0.5 nm, epi-ready polished. back surface fine ground.
  • Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.

Related Reference

1. Blue InGaN/GaN laser diodes grown on (33) free¨«standing GaN substrates

https://doi.org/10.1002/pssc.201001012

2.Review: InGaN-BASED LASER DIODES

https://www.jsap.or.jp/jsapi/Pdf/Number01/Vol-1_Cutting%20Edge.pdf