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Free-standing GaN substrate, C plane (0001), semi-insulating, size 2 inch Diameter
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\nConductivity type: semi-insulating, Single side polish\n
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Doping: Fe-doped (iron doping)
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\nPlease contact us for discounted rates when you order a larger quantity.
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  • \nDimension: 2 inch, or 50.8 mm
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  • \nThickness: 350 +/- 25 um\n
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  • \nUsable area: >90%
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  • \nOrientation: C-plane (0001) off angle toward M-axis <1-100> 0.35 deg+/- 0.15 deg\n
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  • \nTotal Thickness Variation: <15 um
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  • \nBow: <20 um
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  • \nResistivity (300K): > 10^6 Ohm-cm\n
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  • \nFe-doping concentration: ~ 3 × 1018 cm−3\n
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  • \nDislocation Density: < 9 x 105 cm-2
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  • \nPolishing: Front surface: Ra <0.5 nm, epi-ready, double side polished available per request\n
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  • \nPackage: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.
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Related Reference

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1. Blue InGaN/GaN laser diodes grown on (33) free-standing GaN substrates

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https://doi.org/10.1002/pssc.201001012

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2.Review: InGaN-BASED LASER DIODES

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MSE PRO Laser Diode Grade 2 inch Fe-doped Semi-insulating Gallium Nitride Single Crystal C plane (0001)

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MSE PRO Laser Diode Grade 2 inch Fe-doped Semi-insulating Gallium Nitride Single Crystal C plane (0001)

Free-standing GaN substrate, C plane (0001), semi-insulating, size 2 inch Diameter
Conductivity type: semi-insulating, Single side polish
Doping: Fe-doped (iron doping)
Please contact us for discounted rates when you order a larger quantity.
  • Dimension: 2 inch, or 50.8 mm
  • Thickness: 350 +/- 25 um
  • Usable area: >90%
  • Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.35 deg+/- 0.15 deg
  • Total Thickness Variation: <15 um
  • Bow: <20 um
  • Resistivity (300K): > 10^6 Ohm-cm
  • Fe-doping concentration: ~ 3 × 1018 cm−3
  • Dislocation Density: < 9 x 105 cm-2
  • Polishing: Front surface: Ra <0.5 nm, epi-ready, double side polished available per request
  • Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.

Related Reference

1. Blue InGaN/GaN laser diodes grown on (33) free-standing GaN substrates

https://doi.org/10.1002/pssc.201001012

2.Review: InGaN-BASED LASER DIODES

$5,441.95
MSE PRO Laser Diode Grade 2 inch Fe-doped Semi-insulating Gallium Nitride Single Crystal C plane (0001)—
$5,441.95

Product Information

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Description

Free-standing GaN substrate, C plane (0001), semi-insulating, size 2 inch Diameter
Conductivity type: semi-insulating, Single side polish
Doping: Fe-doped (iron doping)
Please contact us for discounted rates when you order a larger quantity.
  • Dimension: 2 inch, or 50.8 mm
  • Thickness: 350 +/- 25 um
  • Usable area: >90%
  • Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.35 deg+/- 0.15 deg
  • Total Thickness Variation: <15 um
  • Bow: <20 um
  • Resistivity (300K): > 10^6 Ohm-cm
  • Fe-doping concentration: ~ 3 × 1018 cm−3
  • Dislocation Density: < 9 x 105 cm-2
  • Polishing: Front surface: Ra <0.5 nm, epi-ready, double side polished available per request
  • Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.

Related Reference

1. Blue InGaN/GaN laser diodes grown on (33) free-standing GaN substrates

https://doi.org/10.1002/pssc.201001012

2.Review: InGaN-BASED LASER DIODES